Blue/ultraviolet sensitive detector on <100> silicon membrane

In this paper, attention has been focused on two major aspects: fabrication of a low dark silicon photodiode with enhanced responsivity for blue/ultraviolet radiation (/spl lambda//sub /spl isin// 200-400 /spl mu/m) by arsenic diffusion, using as planar source arsenic doped oxide deposited by LPCVD on the active area, and development of a post process step for obtaining a <100> silicon membrane of /spl sim/10 /spl mu/m by using aqueous alkaline etching (KOH) without modifying the opto-electrical parameters of the photodiode structures.