Demonstration of a Novel Monolithically Integrated GaN-on-AlN/SiC Half-Bridge

The monolithic integration of GaN-based transistors is challenging due to the substrate-related issues resulting from a common substrate. This work presents a novel 600 V/105 mOhm monolithically integrated GaN-on-AlN/SiC half-bridge with Schottky-type gates, which shows immunity to substrate biasing and thus, enables straightforward on-chip integration without performance degradation. The proposed de-vice is systematically characterized and the impact of the substrate bias on device performance is stud-ied in both static and dynamic measurements. Moreover, the characteristics of the proposed monolithic half-bridge are compared with related discrete transistors using the same device technology, demon-strating the advantages and challenges of monolithic integration. A short-term continuous operation at a switching frequency of 5 MHz and 200 V/5 A in a buck-converter is achieved, highlighting the potential of the proposed monolithic half-bridge for high-frequency applications.