A proposal of test set-up for the separation of GaN transistors during measurements of radiated emissions in the gigahertz band and for changing climatic condition

The article presents a proposal of test setup for measuring of radiated emissions in the gigahertz frequency range from new types of transistors based on gallium nitride (GaN). The novelty is a dedicated Faraday cage was designed to maximally isolate transistors from emissions coming from auxiliary equipment. It was installed inside an anechoic chamber with measuring antenna. The high-speed broadband spectral measurement was performed using a real-time EMI receiver to verify potential lack of compliance for EMI regulations. It also shows the results of GaN transistors behavior in changing climatic conditions.