Safe Switching Method for MOSFETs used in Low Voltage DC Semiconductor Circuit Breakers

This paper introduces a novel method for paralleling multiple MOSFETs in DC semiconductor circuit breakers to achieve safe turn-off during fault conditions. Traditional paralleling approaches often result in uneven current sharing, excessive thermal stress, and high voltage spikes during switching. The proposed method utilizes IGBTs parallel connected to MOSFETs for ensuring safe turn-off of the MOSFETs without overshoot during fault current interruption. By achieving safe turn-off of multiple parallel MOSFETs, the method enhances the overall system reliability and performance, making it ideal for high-power DC applications requiring efficient fault management and protection. The method is demonstrated by experimental work.