Precision Junction Temperature Monitoring with Monolithically Integrated Sensor and Comparison with Other In-situ Methods

The junction temperature (TJ) in discrete power devices is measured with a monolithically integrated sensor and compared to those obtained from other methods for TJ estimation by measuring body diode and gate voltage. These methods enable a comprehensive understanding of junction behavior in diverse operating conditions. To optimize thermal management and enhance the reliability of high-performance applications, the methodologies presented here facilitate an appropriate characterization of the thermal behavior of the device package in conjunction with the cooling system. These approaches enable the precise evaluation of thermal performance, contributing to reliable design. This research compares different TJ estimation methodologies for discrete power MOSFETs and highlights the advantages and limitations of package-integrated temperature sensors for in-situ temperature measurements. The proposed framework significantly enhances the accuracy and reliability of thermal analysis in power electronic systems by systematically addressing key sources of error. This multidisciplinary approach facilitates the systematic identification and mitigation of thermal hotspots and permits optimization of the heat dissipation pathways.