Vertical GaN Junction Barrier Schottky Diodes Fabricated by Using Channeled Implantation of Mg Ions and Ultrahigh-Pressure Annealing

This study presents the fabrication of vertical GaN junction barrier Schottky (JBS) diodes by using magnesium (Mg) ion implantation on a channeling condition and subsequent ultrahigh-pressure annealing (UHPA). We performed a technology computer-aided design (TCAD) simulation study to confirm the effect of channeled implantation. In the JBS diode with deep Mg profile by channeled implantation, the electric field at the surface was suppressed more efficiently than that in the random (conventional) implantation JBS diodes. It leads to the reduction of leakage current owing to the thermionic-field emission (TFE) at the Schottky interface. As expected, channeled implantation JBS diodes showed low leakage current and high breakdown voltage (BV) depending on the n-GaN channel region width. This study demonstrated that channeled implantation of Mg ions can be an effective method for the fabrication of GaN JBS diodes.