28/39 GHz Dual-Band GaN Power Amplifier Design

In this paper, a 28 GHz/39 GHz dual-band monolithic microwave integrated circuit (MMIC) gallium nitride (GaN) power amplifier has been proposed for the long-range millimeter-wave radar and 5G communication applications. The amplifier integrates a driver and a power circuit, utilizing a commercial 40 nm GaN technology. Unique low-loss dual frequency matching circuits are employed to ensure high efficiency at the desired output power. The simulation results show that the power amplifier achieves a saturated output power of above 31 dBm at both frequencies, with a power-added efficiency (PAE) exceeding 36%.