A Physics-Based Compact Model for Ambipolar Schottky-Barrier CNTFETs

The presence of Schottky-barrier (SB) at the contact of carbon nanotube field-effect transistors (CNTFETs) is crucial in determining the transport properties. Here, by solving the Landauer equation, we can arrive at a physics-based compact model for ballistic CNTFETs that incorporates the thermionic emission and tunneling current, which is also capable of capturing the inherent ambipolar behavior of SBFETs. The excellent agreement between simulated and measured results of the fabricated $5-\text{nm}$ CNTFET confirms the validity of the model.