Performance Analysis of Advanced Ferroelectric $\text{HfO}_{2}-\text{ZrO}_{2}$ Superlattice Gate Stack Transistor with Multi-Phase Ferroelectric Order

In this work, we investigate the integration of advanced ferroelectric $\text{HfO}_{2}-\text{ZrO}_{2}$ (HZH) superlattice gate stacks with mixed t/o-phase ferroelectric order, onto Fully Depleted Silicon-On-Insulator (FDSOI) transistors. Our study reveals that the HZH superlattice gate stack leads to improved equivalent oxide thickness (EOT). The improvement in EOT leads to enhanced gate capacitance ($C_{g g}$), and better $I_{O N} / I_{O F F}$ ratio compared to traditional high- $\kappa$ oxides, while maintaining low leakage and high transconductance. Furthermore, while the location of t-phase can affect $\mathrm{C}-\mathrm{V}$ behaviour, little impact on I-V is observed.