Surface Potential-Based Compact Model for IGZO-DRAM Enables the TCAD-to-SPICE Framework for Reliability-Aware DTCO Flow

With the Design-Technology Co-Optimization (DTCO) being increasingly significant in IGZO-DRAM, a surface potential-based compact model is highly required. For better understanding the disorder effects, an in-house TCAD tool is proposed to study sub-threshold properties. On this basis, a unified surface potential based compact is provided with underlying transport mechanisms for various structures. By addressing critical reliability issues, such as D2D and C2C variability, it enables the TCAD-to-SPICE framework for realizing a reliability-aware DTCO flow of IGZO-DRAM.