Enhanced Thermal Stability of Ru Interconnects Using h-BN as Barrier Layers

As semiconductor technology advances, Ruthenium (Ru) emerges as a promising interconnect material. However, its integration into advanced Backside Power Delivery Networks (BSDPN) faces significant challenges due to the high-temperature processing requirements of front-end-of-line (FEOL) fabrication. This study demonstrates that hexagonal boron nitride (h-BN) is a viable barrier layer for Ru-based BSDPN interconnects, enabling them to withstand high-temperature processing without significant diffusion, highlighting the promising future of h-BN for next-generation integrated circuits.