Selective-Attention Neuromorphic Vision Classifications Based on ɑ-In2Se3Bi2O2Se Ferroelectric-Semiconductor Heterotransistors

Herein, we present multifunctional neuromorphic vision device based on the ɑ-In2Se3Bi2O2Se ferroelectricsemiconductor heterojunction. Central to this innovation is the in-plane voltage that drives out-of-plane polarization coupling within the ferroelectric heterojunction, which facilitates non-volatile conductance alterations through modulating the interface charge configuration with the robust stability demonstrated over 10⁴ cycles. Furthermore, the device exploits a photo-induced ferroelectric polarization reversal mechanism, resulting in a nonvolatile light response that persists for over 10³ s, accompanied with an impressive photoresponsivity of up to 10⁵ A/W in the broad-spectrum range of 400-980 nm. We demonstrate the in-sensor pattern classification by the optoelectronic-ferroelectric driven spectrum-selective attention.