Integrated Passive Devices in the Silicon-Interconnect Fabric

We demonstrate the integration of integrated passive devices (IPDs) within the silicon interconnect fabric (Si-IF) to enable ultra-compact, high-density power delivery for wafer-scale systems. Metal-insulator-metal (MIM) capacitors and air-core inductors are fabricated using a Si-IF-compatible process and vertically integrated through $\mathbf{C u - C u}$ interconnects. Measurement results confirm that the bonding process has minimal impact on the performance of MIM capacitors, ensuring reliability for power delivery applications in advanced heterogeneous integration.