A Physics-Based Circuit Model for Magnetic Tunnel Junctions

This work presents an equivalent circuit model for magnetic tunnel junctions (MTJs) that accurately reproduces their magnetization dynamics and electrical behavior within the macrospin approximation. The model is validated through direct numerical simulations of the Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation, encompassing ferromagnetic resonance, field- and spin-torque-induced switching and spin-torque-induced oscillations. Simulation results exhibit excellent agreement between the equivalent circuit model and the LLGS-based simulations, confirming the model accuracy and utility for efficient circuit-level analysis of MTJs. The capability of handling time-dependent magnetic fields and voltage-driven excitations renders the model applicable to diverse areas, including neuromorphic computing, microwave signal processing, and spintronic memory technologies. By providing a computationally efficient yet physically rigorous circuit representation, this work facilitates seamless integration of MTJs into complex electronic systems, thereby accelerating the advancement of novel spintronic circuit architectures.