Ultra-High Steep Ion Beam Etching by Employing Highly Dynamic Holder

For high-quality etching of incredibly small dimensions and complicated structures, it is essential to provide great control over sidewall morphology during the IBE process. This study presents a two-dimensional high precision adjustable motion sample holder and corresponded dynamic etching process for ion beam etching system designed to improve control over sidewall morphology and improve etching uniformity during the etching process. Structural enhancements increase the control accuracy to 0.1°, highly improving incident angle precision. It minimizes surface roughness in nanopatterning and ensures high-quality etching, meeting the strict requirements of sidewall contour control, improving the sidewall angle from 67.8° to 84.7°. The proposed solution significantly enhances etching uniformity for small, complex structures.