Silicon Trench Morphology Optimization Using ICP Etching

In order to meet the requirements of sidewall angle and depth loading in deep silicon etching, we have studied and optimized ICP etching parameters. This study has shown that under constant etch step and bombardment step conditions, a passivation time of 15s can result in a continuous and smooth sidewall morphology. Reducing the time leads to severe lateral etching, while increasing the time will result in a trapezoidal morphology. The depth loading in pulse mode is smaller than that in CW mode.