A Temperature Compensating Dynamic Biasing Circuit for a K-Band Driving Amplifier

A temperature compensating dynamic biasing circuit (TC-DBC) for a K-band driving amplifier (DA) is proposed in this paper. The overdrive voltage with the positive temperature coefficient (TC) of an n-channel MOS field-effect transistor (MOSFET) and resistors with different TCs are used in the biasing circuit of the DA to compensate the transconductance variation of the amplifying transistor with temperature. In 65-nm CMOS technology, a TC-DBC is realized and integrated in a K-band DA. Experimental results show that, with the TC-DBC, from ─40°C to 130°C the transconductance variation of the amplifying transistor can be compensated, and the S21 variation of the DA can be improved by 25% across the band of 17─21 GHz.