Accurate Leakage Current Modeling of THz Schottky Barrier Diodes Using a Bias-Dependent Junction Resistor

I–V characteristics of Schottky barrier diodes (SBDs) in low forward bias and reverse bias voltages are critical in low-power and high-speed SBD-based circuits. Accurate modeling of I–V in these regions also helps in the modeling of gate current behavior of field effect transistors (FETs). In the existing SPICE models for SBD, the carrier transport mechanism is governed by thermionic emission (TE). However, it does not describe and include the current transport due to leakage through the junction and recombination in the space-charge region in the low forward bias voltage and reverse bias voltage up to breakdown. This work presents modeling of I–V characteristics of SBDs considering all the practical aspects of current transport through the Schottky junction to predict I–V accurately and in different temperature conditions as well. This model is implemented in the advanced design system (ADS) and validated against the GaAs-based SBD measurement data for different temperatures in the forward and reverse bias regions. This model is also validated on GaN and 3C-SiC-on-Si SBDs published I–V data.