An Improved SiC MOSFET Analytical Model for Multi-timescale Simulation and Loss Analysis of Power Electronic Systems

Silicon carbide (SiC)-based power electronic systems have demonstrated significant potential in modern power grids and motor drives. While traditional physical models provide high accuracy for simulating the switching transients, they often encounter convergence issues in complex systems. The recently proposed piecewise analytical transient (PAT) model enhances computational efficiency while maintaining good accuracy. However, despite its validation on a 1.2kV/300A SiC module from Fuji Electric, further refinement is required for other SiC modules. This paper proposes a numerical-analysis-driven method and improves the transient stage segmentation and model expressions of the previous PAT model. Experimental validation on three different 1.2kV/300A SiC modules with 62mm packaging demonstrates that the improved model delivers greater accuracy and broader generalizability. A loss analysis of a solid-state transformer (SST) converter is also performed to showcase the proposed method’s effectiveness in simulating complex systems.