Comprehensive Review on Advances in Negative Capacitance FinFET Technology and its Applications

Negative capacitance Fin Field-Effect Transistors (NC-FinFETs) have emerged as a promising solution for improving the performance of nanoscale semiconductor devices by enhancing electrostatic control, reducing power consumption, and emerged as a groundbreaking solution to the limitations faced by traditional Complementary Metal-Oxide-Semiconductor (CMOS) technology, particularly in scaling and power consumption. This paper comprehensively reviews recent advancements in negative capacitance FinFET (NC-FinFET) technology, including their use in Static Random-Access Memory (SRAM), hydrogen gas sensing, and magnetic field detection. A comparative analysis of NC-FinFETs and conventional FinFETs demonstrates superior energy efficiency, sensitivity, and scalability. The review focuses on NC-FinFET designs incorporating ferroelectric Hf02 and SiO2 as insulating layers, emphasizing NC-FinFET's potential to drive innovations in low-power electronics and pave the way for its adoption in next-generation sensors, semiconductor technology, and computational architectures. This review investigates how FinFET technology can improve machine learning (ML) classifier performance and ML models integrated with TCAD simulations to optimize the thermal and electrical performance of NC-FinFETs, enabling enhanced computational efficiency and device reliability.