Modular HfOx-RRAM for On-Demand Micromodular Electronics

Micromodular metal-HfOx-metal resistive random-access memories (RRAM) were fabricated, transferred to foreign substrates, and contacted using high-resolution electrohydrodynamic jet (e-jet) printing. The modular RRAM exhibited bipolar switching at low operating voltages and multi-level analog resistance states programmable using variable amplitude voltage pulses. These variable resistance RRAMs were also integrated with an amplifier and a bandpass filter to modulate their gain and corner frequencies. This work enables integration of high-quality RRAM devices in modular circuits and paves the way for microscale heterogeneous integration at the device level.