Exploring Fault Tolerance to Ionizing Radiation in Severe Environments: Power Transistors with Distinct Layouts

This work investigates both the impact of cumulative radiation and the influence of temperature on the performance of P-MOS power devices featuring two distinct layouts: Enclosed Layout Transistor (ELT) and Rectangular Layout. The Device Under Test (DUT) was exposed to 10 keV X-rays, accumulating a dose of 300 krad(Si), while operating in ON and OFF modes. Subsequently, the devices underwent thermal treatment and were characterized at temperatures ranging from 223 K to 343 K. The results suggest that both layouts exhibit similar resilience to the effects of Total Ionizing Dose (TID) and thermal variations.