A High-Power RF SOI Switch With 48.7-dBm P-₀.₁dB Peak Power for 5G MIMO Applications

In this brief, a high-power RF switch that operates at $2\sim 4$ GHz is designed and implemented using 130nm RF SOI technology. To improve the high-power handling capability in Tx mode, a series and parallel stacked structure with uniform voltage division across an OFF-shunt branch was proposed and analyzed. For the shunt branch of RF switch, the Vds voltage discrepancy of each transistor under high power is balanced by adjusting the width ratio between transistors, ensuring high-power handling capability. Moreover, the suggested design employs capacitor-based compensation to further equalize the voltage division. The experimental results demonstrate that the proposed RF switch achieves 48.7 dBm (74W) of 0.1 dB compression point (P-0.1dB, peak power), $0.35\sim 0.87$ dB insertion loss, transmit-receive isolation (Tx-Rx ISO) >35.7 dB at $105~^{\circ }$ C. The reported structural design ensures stability and reliability under high-power operating, providing significant potential for 5G MIMO applications.