Encoding Research Based on the Multiple Sneak Path Issues in Resistive Random Access Memory

Resistive Random Access Memory (ReRAM), as a non-volatile storage technology, has shown great potential in the storage field due to its high density and fast storage capabilities. However, its crossbar array structure gives rise to the issue of Sneak Path Interference (SPI) that significantly impacts data reliability. To address this challenge, this paper refines the general model of multiple sneak paths based on the number and combination types of these paths. Furthermore, an across-array coding scheme under multiple sneak paths is proposed. This scheme allocates low-density parity-check (LDPC) codewords to multiple memory arrays, reducing the correlation of channelcoded bits used for decoding, thereby achieving a diversity gain. Simulation results show that, under the multiple sneak path model, the cross-array coding scheme with LDPC coding can effectively improve the system’s error rate performance.