IM/DD Silicon Receiver Subassembly with Opto-Electrical Bandwidth of 84 GHz

We report on performance of silicon direct detection subassembly achieving 112 GBaud PAM4 at 1300 nm. The chip was realized by direct Al-Al wafer bonding integrating a BiCMOS TIA and germanium waveguide- integrated photodiodes. We demonstrated a receiver efficiency of 1.8 pJ/bit.