Multi-Temperature RF GaN HEMT Model Using the ASM Industry Standard

In this paper, we discuss the methodology for the extraction of DC parameters and RF parameters of normally-on Gallium Nitride-based high electron mobility transistors (GaNHEMT). The industry standard ASM GaN HEMT model is used to model the bias dependency of intrinsic capacitances and resistances of the small signal equivalent circuit by fitting the DC characteristics. The extrinsic parameters are then extracted using Scattering parameters for a broad frequency range. Through validation with measured data at multiple biases and temperatures, our methodology demonstrates accurate and reliable parameter extraction for developing large-signal models of GaN-HEMTs. Given the need for GaN RF products in harsh environments, this model serves as a facilitator for the design of future GaN RF applications for deployment at elevated temperatures.