A Multicellular Converter Topology Allowing for the Scaling of GaN HEMTs to Higher Power Applications

This paper presents a multicellular converter topology allowing compact switching cells to be connected in series and in parallel, to aid in the adoption of Gallium Nitride (GaN) high-electron-mobility-transistors (HEMTs) for higher power applications. Maximising the potential of GaN based semiconductors for applications with greater blocking voltages than 600 V and current ratings over 50 A. The topology presented intends to operate in medium/high voltage DC/AC applications with a low frequency output, overcoming barriers relating to high commutation inductance and the high dv/dt present in other power converters. This paper will provide a comprehensive theoretical analysis for single-phase operation of the converter, offering a method of selection for the main circuit parameters. A loss analysis, using PLECS, for varying operating scenarios is also included.