Reducing Dynamic Memory Refresh Overhead Via Read-Less Refresh Operation Using Mems-Based Memory Cell

This article presents a novel read-less refresh operation for data retention using a single MEMS-based memory cell, effectively addressing refresh overhead in dynamic memory systems. The proposed design eliminates the need for capacitors and employs a charge-free mechanism to store binary states (‘0’ or ‘1’). By leveraging this innovative approach, the refresh cycle time (tRFC) is reduced by 80% compared to conventional schemes. Additionally, the demonstrated retention time of 100 ms extends the refresh command interval (tREFI) to 12.2 µs, enabling longer intervals for normal read and write operations. This advancement simplifies memory architecture, enhances operational efficiency, and minimizes interruptions caused by frequent refresh cycles, making it a compelling solution for next-generation memory systems.