EM and Channel Simulations of BoW-Based Structures for Advanced Packaging Technologies

The demand for miniaturization and increased integration densities in semiconductor design has heightened the need for efficient high-density interconnects. The Bunch of Wires (BoW) specification offers a flexible, open interface that supports data rates from 2 Gbps to 32 Gbps per wire, ensuring high throughput and minimizing signal degradation. This paper presents electromagnetic (EM) and channel simulations of BoW-based single-ended signal-signal (SS) and ground-signal (GS) structures, focusing on the effects of surface roughness and wire configurations. The study reveals that GS structures exhibit approximately 20% higher insertion loss compared to SS structures, while rough wires experience up to 64% more loss at higher frequencies. Simulations show that BoW interconnects can support data rates up to 32 Gbps for smooth wires, but performance declines with increased wire length or surface roughness. These findings highlight the need for optimized wire design to support high data throughput in advanced semiconductor applications.