Revisiting pioneering charge-transport theories in analysing modern Metal-Semiconductor contacts

Metal-semiconductor contacts, such as ohmic contacts in FET devices, have traditionally been analysed using classical charge-transport theories. However, many past assumptions, including depending on a single predominant current transport mode, may result in unaccounted current for modern small contacts. This paper revisits and applies a pioneering charge-transport theory to demonstrate this issue and affirms the need for a comprehensive calculation of all transport modes. Additionally, the paper reports an application of the proposed theory in an analytical model for analysing ohmic contacts in test structures.