Multi-Threshold CMOS Technology SAFF for High Speed and Low Power Applications

The objective of this work is to create a novel 45nm multi-threshold CMOS (MTCMOS) sensing amplifier-based flip-flop (SAFF) circuit that can function at high speeds and low power consumption. In comparison to traditional SAFFs and master-slave flip-flops (MSFFs), the design achieves significant reductions in both power consumption and propagation latency by incorporating insights from prior research. The enhanced sense amplifier and latch stage design, which enables effective amplification and data storage with reduced power consumption and faster operation, is the main innovation. In the latch stage, a conditional cut-off technique is also used to get rid of bugs and guarantee reliable operation. Strategic use of MTCMOS optimization reduces leakage current during idle times, resulting in significant power savings. Lastly, MTCMOS optimization in the design enables dependable operation at reduced supply voltages.. In comparison to traditional SAFFs and MSFFs, the project seeks to produce superior power-delay product and significant reductions in both propagation delay and power consumption. The design also aims to keep a competitive area footprint that is comparable to traditional SAFFs. Performance metrics will be measured and functionality will be confirmed through simulations with tools such as Cadence Virtuoso. Moreover, post-layout simulations and layout design will be carried out to validate functionality and performance on a 45 nm standard cell library. Area optimization should be investigated further to minimize the footprint even more while meeting performance goals. Keywords: 45nm Multi-Threshold CMOS (MTCMOS), Sense Amplifier-Based Flip-Flop (SAFF), Low-Power Design, High-Speed Design, Reduced Power Consumption, Reduced Propagation Delay, Improved Power-Delay Product, Compact Design, Cadence Virtuoso Simulation, Layout Design, Post-Layout Simulation.