Abstract:
We report a field-free switching (FFS) scheme of Rashba-type crystal torque magnetic random-access memory (CT-MRAM) based on the AIInSb/InSb/CdTe heterostructures. Benefi...Show MoreMetadata
Abstract:
We report a field-free switching (FFS) scheme of Rashba-type crystal torque magnetic random-access memory (CT-MRAM) based on the AIInSb/InSb/CdTe heterostructures. Benefiting from the giant interfacial Rashba spin-orbit coupling (SOC), the spin-orbit torque efficiency of the spin-generation channel (\xi=1.5) is four times larger than the conventional heavy-metal systems, enabling an ultra-low write current density of J_{\mathrm{S}\mathrm{W}}=7.5\times 10^{5}\mathrm{A}/\text{cm}^{2} at room temperature. Moreover, the crystal torque inherited from the low-symmetry point group (3m1) not only simplifies the device structure, but also warrants a stable FFS operation over a wide temperature range from -40^{\circ}\mathrm{C} to 12 5^{\circ}\mathrm{C}.
Published in: 2024 IEEE International Electron Devices Meeting (IEDM)
Date of Conference: 07-11 December 2024
Date Added to IEEE Xplore: 18 February 2025
ISBN Information: