Electrically Erasable Oxide-Semiconductor-Channel Charge Trap Flash Memory with Unipolar Operation

In this work, we first demonstrate the electrically erasable oxide-semiconductor-channel charge trap flash (OSCTF) memory. To address the hole shortage inherent in the oxide semiconductor, we inverted the gate stack and positioned a hole supplier on the gate. Additionally, we developed a novel operating method that employs unipolar positive pulses for both program and erase operations to prevent channel floating. The OSCTF memory, featuring the unique strategy, exhibited complete program/erase operation with a memory window of 4.9 V. This work opens the potential of oxide semiconductors as channel materials for charge trap flash memory.