Sub-60mV/dec Swing and Drive Current in Dirac-Source FETs: A Design Study Based on First-Principle Transport Simulations

By using a modelling framework consisting of NEGF-based ab-initio simulations, we investigate the operation and design of Dirac-Source FETs (DSFETs). First, we discuss some methodological aspects that we found pivotal to observe the sub-60mV/dec swing in ab-initio simulations. Then, we propose the novel HGr-DSFET based on hydro-genated graphene (HGr). We show that the HGr-DSFET has a robust sub-60mV/dec operation and an ON current between $2\times$ and $4\times$ larger than the graphene-MoS2 DSFET counterpart. Our study addresses and elucidates several physical and design aspects of DSFETs, including the rethermalization effects due to phonon scattering.