Impacts of Wire Resistance and Capacitance on Memristor Crossbar Arrays

Memristor crossbar arrays are emerging technologies for neuromorphic computing and non-volatile memory. However, their performance is significantly influenced by parasitics. This paper models the parasitics in crossbars, including wire resistance and differenttypes of parasitic capacitances. Additionally, this paper explores energy consumption, time delays, voltage drops, and sneak path currents in both 1S1R and 1T1R crossbars under three scenarios: a crossbar without parasitics, a crossbar with only wire resistance, and a crossbar with both wire resistance and parasitic capacitance. Simulations show that wire resistance and parasitic capacitance degrade memristor crossbar performance, particularly as crossbar size increases. Wire resistance primarily causes voltage drops, while parasitic capacitance mainly contributes to increased programming delays. For example, in the WRITE 1 operation for a 1S1R 32x32 crossbar, energy without parasitics is 0.895% pJ, 73.91% lower with wire resistance and 84.7 8% lower with both resistance and capacitance. Delay increases 18.75% with wire resistance and 53.26% with capacitance. Voltage drops 10.59% with wire resistance and further to 11.28% with capacitance. Sneak Path Current increases from $3.74 \mu \mathrm{~A}$ to $3.81 \mu \mathrm{~A}$ with wire resistance and to $4.12 \mu \mathrm{~A}$ with capacitance.