Photovoltaic Performance Analysis of Nanostructure $\text{GaAs}_{1-\mathrm{x}}\text{Bi}_{\mathrm{x}}$ Solar Cell for Mole Fraction ${}^{\prime}x^{\prime}=0.01$

III- V alloy semiconductor $\operatorname{GaAs}_{1-x} \text{Bi}_{\mathrm{x}}$ is a promising material for photovoltaic applications due to its tunable bandgap with varying mole fraction. We investigated the potential of $\operatorname{GaAs}_{1-x} \mathbf{B i}_x$ alloy when implemented in nanowire homo junction solar cell having radial as well as axial doping profiles, heterojunctions with organic materials as well as carrier selective contacts in our previous works. A brief comparative analysis considering optical performance of GaAsl­ $\text{xBi}_{\mathrm{x}}$ solar cell (SC) in nanowire (NW), nanopyramid (NP) and inverted nanopyramid (INP) structures have been presented here. We considered 1 % Bi mole fraction similar to our previous published reports. The optical performance analysis begins with geometry optimization of all the structures with respect to generated short circuit current density $(\mathrm{J}_{\mathrm{s}\mathrm{c}})$ considering the ideal condition of unity internal quantum efficiency (IQE). The variation in generated ideal $\mathrm{J}_{\mathrm{s}\mathrm{c}}$ is justified with respect to photo absorption spectra as well as photo generation rate profile. The study reveals best result for nanowire geometry as compared to other nanostructures. We finally present the solar cell figures of merit with optimized geometrical conditions. The band diagram for nanowire solar cell is also presented to obtain the open circuit voltage. NWSC structure offers a maximum PCE of ~19% for a SRH minority carrier lifetime $(\text{Tn})$ of 10 ns.