Design of a W-Band Low-Noise Amplifier with High Gain and Large Bandwidth in 130 nm SiGe BiCMOS Technology

This paper presents a W -band low-noise amplifier (LNA) design in advanced 130 nm Silicon Germanium (SiGe) BiCMOS technology with cutoff frequencies $f_{\mathrm{T}}/f_{\max}$ of 300/450 GHz. The LNA possesses a stable gain of 23 dB and an averaged noise figure (NF) of 4.6 dB over a 3-dB bandwidth of 40 GHz, which covers the whole W-band. The large bandwidth is obtained by cascading four LNA stages, where the first three stages are designed at the center frequency of the W -band (94 GHz), and the last stage is operating at 120 GHz. To stabilize the gain over frequency and make the LNA unconditionally stable from DC to the upper end of the W-band, emitter degeneration is applied at the first stage, and several RC filters are added to the following stages. Broadband T -shape interstage matching networks are employed to maximize the power transfer between stages. The final chip size is 0.96 × 0.96 mm²with a power consumption of 12.4 mW.