A 5-to-40 VIN 10 MHz Half-Bridge GaN Gate Driver with dv/dt Immunity

In this paper, a half-bridge gate driver for galliumnitride (GaN) high mobility electron transistor (HEMT) is designed based on 0.18μm BCD process. The proposed driver can run at a frequency up to 10 MHz with a power supply voltage from 5V to 40V and has dv/dt immunity. A self-compensation level shifter is proposed to realize the signal level conversion between high voltage (HV) domain and low voltage (LV) domain. A dead-time control circuit is presented to generate a dead time for GaN half-bridge circuit. Finally, this paper verified the functionality of the driver circuit with a simulation which is performed with 10MHz PWM control signal, 40 volts power supply and two EPC8009 GaN HEMT.