A Wide Dynamic Range Burst Mode Transimpedance Amplifier in BiCMOS Technology

This paper presents a burst mode transimpedance amplifier (BM-TIA) suitable for applications in passive optical network (PON). Hybrid automatic gain control (AGC) structure is employed to achieve high sensitivity of -33.5 dBm and wide dynamic range up to 26.5 dBm. Fabricated in $0.18-\mu \mathrm{m}$ SiGe BiCMOS process, the proposed BM-TIA achieves $76.94 \mathrm{~dB} \Omega$ transimpedance gain and a bandwidth of 7.4 GHz. It consumes 132 mW of power and occupies a chip area of $\mathbf{0. 9 2 2} \mathrm{mm}^{\mathbf{2}}$.