Advancements and challenges in semiconductor technology: a detailed examination of Gallium Nitride

The rapid advancement of semiconductor technology significantly influences various aspects of modern society by introducing new materials and sophisticated devices that enhance efficiency and performance. Among these materials, Gallium Nitride (GaN) has emerged as a promising semiconductor due to its unique physical and chemical properties. This paper provides a detailed examination of GaN, exploring its properties, advantages, disadvantages, and applications, as well as its role in the future of semiconductor materials. GaN, an inorganic compound with a direct bandgap of 3.4 eV, exhibits a hexagonal wurtzite structure. Its superior electron mobility and saturation drift velocity contribute to its effectiveness in radio frequency and microwave electronic devices. The examination of GaN highlights its potential to revolutionize various industries by enabling high-speed, high-frequency applications and supporting the burgeoning demands of modern technology. Challenges related to the sustainable manufacturing processes, recycling of semiconductor materials, and global trade disputes are also discussed, underscoring the complexities and ongoing needs for innovation within the semiconductor industry.