Characterization of Flux Trapping in and Fabrication of Large-Scale Superconductor Circuits Using AC-Biased Shift Registers With 108 500 Josephson Junctions

A variety of superconductor integrated circuits composed of six ac-powered SFQ shift registers with a total of 27078 bits and 108500 Josephson junctions (JJs) per 5 mm × 5 mm chip have been designed, fabricated, and tested to characterize flux trapping, fabrication process yield, and parameter spread. The six 4513-bit registers in the circuits have a common single-phase ac clock and individual input/output drivers, allowing for their parallel testing. We have investigated flux trapping in the circuits with various geometry, size, distance between moats in active ground planes (GPs), and containing up to three additional ‘dummy’ GPs, using multiple cooldowns through the critical temperature with various cooling rates and residual magnetic fields up to ∼ 1.2 µT. For the slit-type and square moats arrayed along the sides of the register cells, we have found a negligible effect of flux sequestered in the moats on the operating margins of the registers, and a negligible probability of detrimental flux trapping outside of the moats. Circuits with 0.3-µm-wide slit moats occupying less than 2% of the circuit area were fully operational in 100% of cooldowns, supporting the viability of a very large-scale integration of superconductor digital circuits. We have also found a strong enhancement of flux trapping outside the moats in circuits with closely spaced GPs and determined a critical distance, ${{{\boldsymbol{t}}}_{\boldsymbol{c}}} \approx $ 0.6 µm, between them. The presence of two or more GPs spaced below the t_c rendered the circuits nonoperational in 100% of cooldowns. We have measured 30 chips with over 3M JJs and determined individual cell operating margins in 138 registers to characterize the fabrication-related parameter spread and detect fabrication defects and flux-trapping events. By finding outlier bit-cells in the statistical distribution of the individual cell margins, we detected about one fabrication defect per million JJs, in most cases causing magnetic flux trapping in the affected cell.The circuits have been fabricated in the SFQ5ee fabrication process at MIT Lincoln Laboratory (MIT LL).