An Investigation of Rg and Rgs Effects on MOSFET for EMI Reduction in a Full Bridge Inverter

In wireless power transfer (WPT) system, the reduction of electromagnetic interference (EMI) is significant. Not only noise caused by leakage magnetic field, but also noise from inverter affect EMI problem to peripherals. Switches of the inverter generate a switching waveform composed of harmonic components, which are harmful to other devices. In this paper, investigations of the rise time of the switching waveform, which is affected by the gate resistance and gate-source resistance, are conducted in order to decrease the harmonic components.