Electron mobility analysis of InN/In0.61Al0.39N heterostructure after HCl treatment

We present a comprehensive analysis of structural and charge transport properties of high-quality N-polar InN/In0.61Al0.39N heterostructures grown by metalorganic chemical vapour deposition (MOCVD). We observed a strong correlation between the HCl surface treatment and electron mobility. The mobility reduction for structure without AlN nucleation was affected by a thinner native surface oxide formation (supported by the lower IO/IN area ratio ~ 0.7), where the surface roughness could play a more significant role.