Investigation of DC and Low-Frequency Noise Performance in GaN-on-Si Power MIS-HEMTs Over a Temperature Range of 4 K–420 K

This study investigates the electrical DC and Low-frequency noise (LFN) characteristics of GaN-on-Si power MIS-HEMTs across an extensive temperature spectrum from 4 K to 420 K to assess their viability for high to cryogenic temperatures. As the temperature drops, improvements are observed in the input DC characteristics, including enhanced transconductance and an increased ON-to-OFF current ratio. Correspondingly, the output DC characteristics affirmed the significant enhancements in drain current and reduced ON-resistance across the same temperature span. These improvements in DC performance are achieved without any evidence of carrier-freeze out throughout the temperature expanse. Furthermore, the LFN characteristics from 10 Hz to 100 KHz reveal a consistent 1/f noise behavior within the measured temperature domain. The trap density inferred from the LFN characteristics increases substantially by two orders of magnitude at deep cryogenic temperatures. Collectively, these experimental outcomes demonstrate that GaN-on-Si power MIS-HEMTs maintain a robust electrical performance over a wide temperature range, providing valuable insights for enhancing their deployment in quantum computing and space-based applications.