The Temperature Coefficient of Threshold Voltage for High Voltage 4H-SiC FinFET

This letter demonstrates a vertical high voltage 4H-SiC FinFET with very low temperature coefficient of threshold voltage $\text {(}\text {dV}_{\text {th}}/\text {dT}\text {)}$ when compared to a standard SiC MOSFET. Here we theoretically and experimentally show that low temperature coefficient is an intrinsic property and a signature of the FinFET effect. We have fabricated SiC FinFETs with a breakdown voltage in excess of 800V, threshold voltage (Vth) of 1.55V at room temperature and a dVth/dT of −7.30mV/K. A calibrated TCAD model has been developed for a physical insight into the devices’ operation. Finally, the letter outlines the potential opportunities associated with this structure.