FeFET Based Logic-in-Memory Pipeline-Style Circuits

Emerging non-volatile memory technologies provides a solution to break through the limitations of the vonNeumann architecture and using these technologies to develop logic-in-memory circuits. In this paper, we propose a novel circuit design style based on hafnium oxide ferroelectric memory technology, using a accumulator as an example. This design method offers a new direction for the development of logic-in-memory circuits. Additionally, the method significantly increases data processing capability and provides greater flexibility for circuit design.