Investigation of Common-Gate and Split-Gate Structures Based on CFET Standard Cells

This study focuses on two basic types of stacked Complementary-FET (CFET) devices: Common-Gate (CG) and Split-Gate (SG) structures. CG structures stand out due to their simplified fabrication process, while SG structures allow for independent control of each gate, thus enhancing the flexibility of circuit design. This paper aims to provide an indepth exploration of the fabrication processes, performance characteristics, and circuit-level analyses of these two structures, revealing their importance and potential in modern integrated circuit design. Through comparative studies, we aim to better understand and optimize the application effectiveness of CFET stacked devices in various scenarios, offering theoretical support and practical guidance for future circuit design and technology optimization.