In Situ Localization Techniques of Defects in Advanced Semiconductor Devices from Macro-Scale to Atomistic-Scale

As manufacturing processes for advanced semiconductor devices become more complex, precise defect localization and characterization are crucial for device failure analysis and reliability improvement. This review summarizes in situ defects localization methods across different scales. Specifically, it covers defect detection techniques from macroscopic level (such as EFA) to microscopic level (such as FIB-SEM and CR technique), even down to atomic level (typically TEM). Also, corresponding research findings are presented. These techniques provide significant support and assistance for developing advanced semiconductor devices.