Comparsion of SiC Planar and Trench Junction Barrier Schottky Diode with Surge Current Capability

The surge capabilities of SiC planar junction barrier schottky diodes and trench junction barrier schottky diodes are analyzed and compared by experiment and simulation in this paper. Though experimental comparison, the maximum surge current of SiC trench JBS is larger than SiC planar JBS, improved by 8.5%. The leakage current of the trench structure is approximately one order of magnitude lower than that of the planar structure at voltages below 1300 V, sacrificing only a small forward voltage drop. Thanks to the deep P+ region design, the p-n junction turn-on voltage in SiC trench JBS diodes is substantially decreased, and the results of both the experiment and simulation studies demonstrate that the trench structure exhibits superior surge capability.