Ferroelectric FETs as Embedded NVRAM Supporting Cryogenic Quantum Processors

The development of scalable and CMOS-compatible cryogenic quantum processors necessitates embedded non-volatile random-access memory to support computation while controlling heat generation under cryogenic conditions. However, conventional memory technologies based on magnetoresistive and resistive effects encounter significant self-heating issues. Consequently, hafnium oxide-based ferroelectric field-effect transistors emerge as a promising alternative. In this study, we first evaluated their endurance across various temperatures, including cryogenic temperatures down to 2 K. We then characterized their temperature-dependent data retention behaviour at each temperature, observing and discussing a notably long electron detrapping time at 2K. Additionally, we analyzed the flicker noise of the transistors in two ferroelectric polarization states.